symbol v ds v gs i dm t j , t stg symbol typ ma x 32 42 65 100 r jl 25 35 c -55 to 150 a 7.2 3.0 w 1.9 a maximum units parameter maximum junction-to-ambient a steady-state power dissipation t a =25c p dsm junction and storage temperature range t a =70c c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 gate-source voltage drain-source voltage 30 i dsm 8.5 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w pulsed drain current b 40 t a =70c continuous drain current a t a =25c AON3408 features ds (v) = 30v i d =11a (v gs r ds(on) < 14.5m ? (v gs = 10v) r ds(on) < 18m ? (v gs = 4.5v) v gs = 10v) r ds(on) < 45m ? (v gs = 2.5v) the AON3408 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. standard product AON3408 is pb-free (meets rohs & sony 259 specifications). g d s g s s s d d d d n-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 30 v v ds =24v, v gs =0v 1 t j =125c 5 i gss 100 na v gs(th) gate threshold voltage 0.7 1 1.5 v i d(on) 40 a 20 24 t j =125c 28 34 23 29 34.5 45 g fs 26 s v sd 0.72 1.0 v i s 4.0 a c iss 900 1100 pf c oss 88 pf c rss 65 pf r g 0.95 1.5 ? q g 10 13 q gs 1.8 nc q gd 3.75 nc t d(on) 3.2 ns t r 3.5 ns t d(off) 21.5 ns t f 2.7 ns t rr 16.8 20 ns q rr 8nc 8.5 0.0 40 a #div/0! body diode reverse recovery time body diode reverse recovery charge i f =8.8a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =8.8a reverse transfer capacitance i f =8.8a, di/dt=100a/ s v ds =v gs i d =250 a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ua v ds =0v, v gs = 12v gate-body leakage current m ? maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v gs =2.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =8.8a v gs =4.5v, i d =8a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.7 ? , r gen =3 ? turn-off fall time turn-on delaytime total gate charge v gs =4.5v, v ds =15v, i d =8.5a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz a: the value of r ja is measured with the device in a still air environment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150c, using t 10s junction-to-ambient thermal resistance. b: repetitive rating, pulse width limited by junction temperature t j(max) =150c. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev0:oct. 2006 AON3408 n-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristic s 1ua 5 100 na 0.7 1 1.5 40 v gs =10v, i d =8.5a 20 24 30.0 36.0 v gs =4.5v, i d =8.5a 23 29.0 v gs =2.5v, i d =5a 34.5 45 v ds =5v, i d =11a 26 0.72 1 maximum body-diode continuous current 4.5 900 1100 88 65 0.95 1.5 q g v gs =10v, v ds =15v, i d =8.5a 10 1.8 3.75 v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? 3.2 3.5 21.5 2.7 i f =8.5a, di/dt=100a/ s 16.8 i f =8.5a, di/dt=100a/ s 8 8.5 0.0 40 a #div/0! this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 40 50 60 012345 v ds (volts) figure 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 16 18 20 22 24 26 28 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.9 1.2 1.5 1.8 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =8.8a i d =8a v gs =4.5v 10 15 20 25 30 35 40 45 50 55 60 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.8a 25c 125c AON3408 n-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 1ua 5 100 na 0.7 1 1.5 40 v gs =10v, i d =8.5a 20 24 30 36 v gs =4.5v, i d =8.5a 23 29 v gs =2.5v, i d =5a 34.5 45 v ds =5v, i d =11a 26 0.72 1 maximum body-diode continuous current 4.5 900 1100 88 65 0.95 1.5 q g v gs =10v, v ds =15v, i d =8.5a 10 1.8 3.75 v gs =10v, v ds =15v, r l =1.8 ? , r gen =3 ? 3.2 3.5 21.5 2.7 i f =8.5a, di/dt=100a/ s 16.8 i f =8.5a, di/dt=100a/ s 8 8.5 0.0 40 a #div/0! this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 1ms 10s dc r ds(on) limi ted t j(max) =150c t a =25c v ds =15v i d =8.8a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =42c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le p ulse t j(max) =150c t a =25c 100 s AON3408 n-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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